HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

Here is MY review of this fantastic little clock that I got from China.

I was a little worried buying from a company that was all the way in China, www.LDUcompany.com but everything went real well and may new clock was delivered in less time then they had said. I had first emailed them a few times with a bunch of questions and they answered every one of my emails quickly. This clock is really neat, every time you flip it on a different side it changes what it tells you and lights up and starts flashing in different colors. It is built very well and it is not cheap junk. It takes triple A batteries (three of them). The alarm is a little soft for me because I am a hard sleeper so I will be using it in my living room and not in my bedroom. I bought the pink one cause I'm a true girl ;)

Here is a link to the clocks section of the website http://www.liangdianup.com/clocks_1.htm

If they ask how you heard about them tell them Heather sent ya. Yeah like they would remember me.

In almost all electronic circuits, the semiconductor diode to use it in many of the circuit plays an important role, it is the birth of one of the earliest semiconductor devices and their applications are very wide.

The working principle of diode

Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.

When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.

When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.

When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.

In almost all electronic circuits, the semiconductor diode to use it in many of the circuit plays an important role, it is the birth of one of the earliest semiconductor devices and their applications are very wide.

The working principle of diode

Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.

When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.

When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.

When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.

Hallo to all.
I am looking for a good impermeable or underwater clock with voice recorder function, even like that one of the cellular phone, where you click a button and it register, but I can't find it.
I bought something like that, the casio DBV 3000, but it wasn't impermeable .
I bought a chinese one too, it says "water resistant", but when you go under the water a few humidity passes and the contacts are oxidized therefore it doesn't works anymore.
Anyone knows a truly impermeable or water resistant model?
Any suggestion or link?
Thanks to anyone that can help me.

__________________
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I'm trying to determine Kd values for protein:RNA binding using tryptophan fluorescence.

Buffer:
10mM HEPES (pH 7.5)
100mM NaCL
4mM MgCl2
1mM TCEP

[protein] = 0.25uM; RNA is titrated in 0 - 4uM.

Instruments used:
-Perkin Elmer LS 55
-Varian Cary Eclipse

Fluoresence quenching data is corrected for the inner filter effect ad fit to a quadratic equation.

Problem:
Im measuring Kd's in the nM range for my protein:RNA complex, but when I titrate RNA into BSA or lysozyme as negative controls, I also measure nM Kds. Same goes for my protein:poly-dIdC.

This is very confusing. Why would I be measuring such tight binding amongst molecules that should have no specific binding?

I've increased [NaCl] to 250 nM (to reduce non-specific binding), conducted the experiment in 25% glycerol (to reduce collisional quenching), neither have alleviated the issue.

Can anyone provide rationale for my results and suggest experiment to separate the specific vs. non-specific interactions that may be leading to my results?

thanks.

Howto compile syslinux using MinGw

Hi...
I was trying to use 2 joysticks for input at a time???
Can that be done using OIS?
If yes...then how?