HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.
Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

In almost all electronic circuits, the semiconductor diode to use it in many of the circuit plays an important role, it is the birth of one of the earliest semiconductor devices and their applications are very wide.

The working principle of diode

Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.

When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.

When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.

When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.

In almost all electronic circuits, the semiconductor diode to use it in many of the circuit plays an important role, it is the birth of one of the earliest semiconductor devices and their applications are very wide.

The working principle of diode

Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.

When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.

When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.

When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.